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Hgtg5n120bnd, hgtp5n120bnd 21a, 1200v, npt series nchannel igbts with antiparallel hyperfast diodes the hgtg5n120bnd and hgtp5n120bnd are nonpunch through npt igbt designs. Junction and storage temperature range tj, tstg55 150 c junction to case rthjc 0. Toshiba field effect transistor silicon n channel mos type. Csd19505kcs 80 v nchannel nexfet power mosfet datasheet rev. Nchannel enhancement mode irfz44n datasheet catalog. A, february 2000 bd579 dimensions in millimeters 8.
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